Deposition Thickness Calculator
Work out deposition thickness instantly with clear inputs, formula shown and shareable results.
About Deposition Thickness Calculator
Deposited thickness is rate times time, but the number that matters for a real structure is step coverage: how thin the film gets on a vertical sidewall or at the bottom of a via. Sputtering gives 20-50%, CVD 60-90% and atomic layer deposition essentially 100%.
Formula
Deposition
thickness = rate x time; sidewall thickness = field thickness x step coverage
Worked example
With the default values below, Deposition Thickness Calculator returns Field thickness of 102.00. Change any input above and every figure here is recalculated in your browser.
Inputs used
- Deposition rate
- 8.5 nm/min
- Deposition time
- 12 min
- Step coverage
- 70 %
- Thickness uniformity
- 3 %
Results
- Field thickness
- 102.00 nm
- Sidewall thickness
- 71.40 nm
- Thickness range across wafer
- 6.12 nm
- Minimum thickness
- 98.94 nm
Step by step
- 1Values used
- 2Deposition
- 3Field thickness= 102.00 nm
- 4Sidewall thickness= 71.40 nm
- 5Thickness range across wafer= 6.12 nm
- 6Minimum thickness= 98.94 nm
Assumptions and limits
- The result is derived only from the 4 inputs listed above. Anything not among them is not part of the calculation.
- In particular, this calculator does not take inflation, tax, fees or charges or compounding frequency into account.
- Figures are rounded for display to 2 decimal places, so totals built from several rounded parts can differ slightly from the unrounded arithmetic.
How these calculators are built and tested is described on the Methodology page. If a figure looks wrong, please report it.
Frequently Asked Questions
Why does step coverage matter?
A barrier or liner that thins to nothing on a via sidewall fails to block diffusion, causing reliability failures long after electrical test passes.
Why is ALD used despite being slow?
It is self-limiting and conformal, depositing one atomic layer per cycle regardless of geometry — essential for high-aspect-ratio features and thin gate dielectrics.
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