Ion Implant Dose Calculator

Work out ion implant dose instantly with clear inputs, formula shown and shareable results.

About Ion Implant Dose Calculator

Implant dose is total charge divided by the elementary charge and the wafer area: D = I x t / (q x e x A). Because dose is measured as integrated beam current, the implanter controls it very precisely — typically better than 1% — which is why implantation replaced diffusion doping.

Formula

Implant dose

D = I x t / (n x e x A), with e = 1.602e-19 C

Worked example

With the default values below, Ion Implant Dose Calculator returns Implant dose of 3,978,298,985,137,880. Change any input above and every figure here is recalculated in your browser.

Inputs used

Beam current: 5 mA
Implant time: 90 s
Wafer area: 706 cm²
Ion charge state: 1

Results

Implant dose: 3,978,298,985,137,880 ions/cm²
Total charge delivered: 0.45 C
Dose: 3.9783 1e15 ions/cm²
Wafers per hour at this time: 32.73 wafers/h

Step by step

1Values used
2Implant dose
3Implant dose= 3,978,298,985,137,880 ions/cm²
4Total charge delivered= 0.45 C
5Dose= 3.9783 1e15 ions/cm²
6Wafers per hour at this time= 32.73 wafers/h

Assumptions and limits

The result is derived only from the 4 inputs listed above. Anything not among them is not part of the calculation.
In particular, this calculator does not take inflation, tax or compounding frequency into account.
Figures are rounded for display to 4 decimal places, so totals built from several rounded parts can differ slightly from the unrounded arithmetic.

How these calculators are built and tested is described on the Methodology page. If a figure looks wrong, please report it.

Frequently Asked Questions

Why does charge state matter?

A doubly ionised species carries twice the charge per ion, so the same beam current delivers half the ions. The dose calculation must divide by the charge state.

What doses are typical?

1e13 to 1e14 per cm2 for threshold adjust and wells, 1e15 to 1e16 for source/drain and contact regions.