Work out ion implant dose instantly with clear inputs, formula shown and shareable results.
Implant dose is total charge divided by the elementary charge and the wafer area: D = I x t / (q x e x A). Because dose is measured as integrated beam current, the implanter controls it very precisely — typically better than 1% — which is why implantation replaced diffusion doping.
Implant dose
D = I x t / (n x e x A), with e = 1.602e-19 C
A doubly ionised species carries twice the charge per ion, so the same beam current delivers half the ions. The dose calculation must divide by the charge state.
1e13 to 1e14 per cm2 for threshold adjust and wells, 1e15 to 1e16 for source/drain and contact regions.