Oxide Growth Time Calculator
Work out oxide growth time instantly with clear inputs, formula shown and shareable results.
About Oxide Growth Time Calculator
The Deal-Grove model describes thermal oxidation with a linear-parabolic law: x squared + Ax = B(t + tau). Thin oxides grow in the reaction-limited linear regime, thick ones in the diffusion-limited parabolic regime. Wet oxidation is roughly an order of magnitude faster than dry.
Formula
Deal-Grove
x^2 + A x = B (t + tau), with B and A/B following Arrhenius temperature dependence
Worked example
With the default values below, Oxide Growth Time Calculator returns Growth time of 43.32. Change any input above and every figure here is recalculated in your browser.
Inputs used
- Target oxide thickness
- 45 nm
- Furnace temperature
- 1,000 °C
- Oxidation typeone of Dry oxygen, Wet (steam)
- Dry oxygen
- Existing oxide
- 5 nm
Results
- Growth time
- 43.32 min
- Parabolic rate constant
- 0.010439 µm²/h
- Linear rate constant
- 0.07542 µm/h
- Silicon consumed
- 17.60 nm
Step by step
- 1Values used
- 2Deal-Grove
- 3Growth time= 43.32 min
- 4Parabolic rate constant= 0.010439 µm²/h
- 5Linear rate constant= 0.07542 µm/h
- 6Silicon consumed= 17.60 nm
Assumptions and limits
- The result is derived only from the 4 inputs listed above. Anything not among them is not part of the calculation.
- In particular, this calculator does not take inflation, tax, fees or charges or compounding frequency into account.
- Figures are rounded for display to 6 decimal places, so totals built from several rounded parts can differ slightly from the unrounded arithmetic.
How these calculators are built and tested is described on the Methodology page. If a figure looks wrong, please report it.
Frequently Asked Questions
Why is dry oxidation used for gate oxide?
It grows slowly and produces a denser, higher-quality oxide with fewer defects — essential where only a few nanometres are needed.
How much silicon is consumed?
About 44% of the oxide thickness, since SiO2 occupies roughly 2.27 times the volume of the silicon it replaces.
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