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The Deal-Grove model describes thermal oxidation with a linear-parabolic law: x squared + Ax = B(t + tau). Thin oxides grow in the reaction-limited linear regime, thick ones in the diffusion-limited parabolic regime. Wet oxidation is roughly an order of magnitude faster than dry.
Deal-Grove
x^2 + A x = B (t + tau), with B and A/B following Arrhenius temperature dependence
It grows slowly and produces a denser, higher-quality oxide with fewer defects — essential where only a few nanometres are needed.
About 44% of the oxide thickness, since SiO2 occupies roughly 2.27 times the volume of the silicon it replaces.